Physics and Dual-Degree Engineering @ Longwood University

Christopher Moore,
PhD, Virginia Commonwealth University

 

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Office
New Science 208-F

Contact Information
Department of Chemistry and Physics
201 High Street
Farmville, VA 23909
Phone: 434-395-2577
Fax: 434-395-2652
E-mail: moorejc@longwood.edu

Courses Taught

• PHYS 102, General Physics II
• PHYS 342, Electronics and Electric Circuit Theory
• PHYS 324, Thermodynamics
• PHYS 400, Unifying Principles of Physics

Research Interests

• Chemical synthesis of nano-materials
• Local electronic properties of nano-scale semiconductor materials
• Applied surface science
  

   Selected Publications

“Sublimation behavior of SiO2 from low- and high-index silicon surfaces,” J.C. Moore, J.L Skrobiszewski, A.A. Baski. J. Vac. Sci. Technol. 25, 4, 812-815 (2007).

"Local electronic and optical behavior of a-plane GaN grown via epitaxial lateral overgrowth,” J.C. Moore, V. Kasliwal, X. Ni, U. Ozgur, H. Morkoc, A.A. Baski, Appl. Phy. Lett. 90, 011913 (2007) .

“Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer”, I. Ahmad, J.C. Moore, V. Avrurtin, A.A. Baski, H. Morkoc, J. Nanosci. Nanotechnol. 7, 8, 2889-2893(5) (2007).

“Study of leakage defects on GaN films by conductive atomic force microscopy,” J.C. Moore, J.E. Ortiz, J. Xie, H. Morkoç, A.A. Baski. J. Phy. 61, 1, 90-94 (2007).

"Comparative study of the (0001) and (0001bar) surfaces of ZnO," S.A. Chevtchenko, J.C. Moore, Ü. Özgür, X. Gu, A.A. Baski, H. Morkoç, B. Nemeth, and J.E. Nause, Appl. Phy. Lett. 89, 182111 (2006).

“Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy,” Y. Dong, R.M. Feenstra, D.W. Greve, J.C. Moore, M.D. Sievert, A.A. Baski, Appl. Phy. Lett. 86, 121914 (2005).

“Au-induced faceting of the Si (5 5 12) surface,” J.D. Dickinson, J.C. Moore, A.A. Baski, Surf. Sci. 561 (2004).

“Scanning tunneling microscopy studies of oxide growth and etching on Si(5 5 12),” J.L. Skrobiszewski, J.C. Moore, J.W. Dickinson, A.A. Baski, J. Vac. Sci. Technol. 22 (2004).

“Scanning Tunneling Microscopy Studies of the Cu:Si(5 5 12) System,” P.H. Woodworth, J.C. Moore, A.A. Baski, J. Vac. Sci. Technol. A. 21, 1332 (2003).

“Oxygen Etching of Si(5 5 12) and Related Surfaces,” J.C. Moore, P.H. Woodworth, J.L. Skrobiszewski, A.A. Baski, Surf. Sci. 532-535, 711 (2003).